Infineon PTFA043002E Thermally-Enhanced High Power RF LD MOSFET, 300W, 470-860MHz

Infineon PTFA043002E Thermally-Enhanced High Power RF LD MOSFET, 300W, 470-860MHz

英飞凌PTFA043002E热增强型高功率射频LD MOSFET,300W,470-860MHz

60-100 USD

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描述PTFA043002是一款300瓦,内部匹配的横向扩散GOLDMOS®推挽FET,用于模拟和数字广播,包括470至860 MHz的8VSB和COFDM应用。热增强型封装提供了最酷的操作。全金属镀层确保优异的器件寿命和可靠性。

特征:
•耐热增强型封装
•宽带内部匹配
•典型的8VSB性能 - 平均输出功率= 100 W - 增益= 16 dB - 相邻 < –33 dBc
•集成ESD保护:人体模型,2级(最低)
•优异的热稳定性
•低HCI漂移
•无铅和符合RoHS标准
•能够在32 V,300 W(CW)输出功率下处理5:1 VSWR

blf278, blf861a, mrf151g, sr401, blf177, blf178xr, blf184xr, blf188xr, blf245, blf278, blf369,blf571,blf574,blf574xr, blf578xr,blf647,blf861a,blf871,blf878, blf881s, blf888,blf888a,blf888b。 sr341, sr401, l501a, sk702, mrf141g, mrf148a,mrf151,mrf151g,mrf275g, mrf6vp2600h,mrfe6vp5600h,mrfe6vp61k25h








Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features:
• Thermally-enhanced package
• Broadband internal matching
• Typical 8VSB performance - average output power = 100 W - Gain = 16 dB - Adjacent < –33 dBc
• Integrated ESD protection: human body model, class 2 (minimum)
• Excellent thermal stability
• Low HCI drift
• Pb-free and RoHS compliant
• Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power

BLF278, BLF861A, MRF151G, SR401, BLF177, BLF178XR, BLF184XR, BLF188XR, BLF245, BLF278, BLF369, BLF571, BLF574, BLF574XR, BLF578XR, BLF647, BLF861A, BLF871, BLF878, BLF881S, BLF888, BLF888A, BLF888B. SR341, SR401, L501A, SK702, MRF141G, MRF148A, MRF151, MRF151G, MRF275G, MRF6VP2600H, MRFE6VP5600H, MRFE6VP61K25H