The JK9610A transistor tester | MOS tube tester | FET test

The JK9610A transistor tester | MOS tube tester | FET test

3600 CNY (524.17USD)

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Product parameters:

  • Processing customization: No
  • Type: Transistor Tester
  • Brand: Golden Section
  • Model: JK9610A
  • Measuring range: 0-1999V
  • Measuring frequency: 0-10 (Hz)
  • Measuring accuracy: ≤2.5%
  • Scope: MOS tube, field effect tube test
  • Weight: 6
  • Size: 420X290X130






I. Overview


JK9610A-type power FET tester, is a new all-digital display power FET parameter test device can be used for nominal current of about 2-85A, 300W power within the N-channel power FET main Which can accurately measure the breakdown voltage VDSS, gate turn-on voltage VGS (th) and amplification characteristics of the transconductance Gfs, especially the transconductance Gfs test current can reach 50A, the use of pulse current test method, even in the High-current test will not cause any damage to the device under test, but also in the high-current state of the FET for parameter consistency testing (matching); instrument can be used for the same current level of the IGBT parameter measurement; Or a very superior performance of the electronic components of the pressure test device, the test pressure when the leakage current 1mA, 250uA, 25uA three gear can be selected.The instrument is mainly used for power FET and IGBT quality inspection, parameter And other electronic components of the pressure test. Instrument divided into N-channel conductivity tester and P-channel conductivity tester two. Instrument appearance, stable performance, accurate measurement, simple operation, the use of safe and convenient.


Second, the main technical performance


1, the breakdown voltage VDSS Measuring range: 0-1999V, accuracy: ≤ 2.5%.
2, IDSS can be divided into three block selection: 1mA, 250uA, 25uA.
3, the gate opening voltage VGS (th) Measuring range: 0-10V. Accuracy: ≤ 5%.
4, Gfs transconductance test current Idm: not less than 1-50 A continuously adjustable, accuracy: ≤ 10%.
5, Gfs transconductance test range: 1-100.


Third, the main test function


1, the power FET breakdown voltage VDSS, gate turn-on voltage VGS (th), transconductance Gfs test.
2, IGBT breakdown voltage V (BR) ces, gate turn-on voltage VGE (th), transconductance Gfs test.
3, power FET and IGBT under 50A in any current state consistency test can be used for matching.
4, the other greater current and power FET and IGBT test: (see below).
5, all kinds of crystal transistors, diodes, voltage regulator tube breakdown voltage test.
6, the varistor voltage test.


Fourth, the test box and test line


1, using the test box can be easily tested TO-126, TO-220, TOP-3 and other similar packages of power FET and IGBT.
2, the use of test lines can be measured in other metal, module and other forms of packaging power FET and IGBT.

Test examples
model
Breakdown voltage
Vdss
Turn on voltage
Vgs (th)
Transconductance
Gfs
Gfs
Test current
Nominal current
ID
Nominal power
PD
Package
IRF640
Basic parameters
200V
2-4V
Gt;
11A
18A
150W
TO-220
Measured parameters
225V
3.0V
12
11A
IRF1010
Basic parameters
60V
2-4V
Gt;
50A
84A
200W
TO-220
Measured parameters
66V
3.2V
67
50A
IRF3205
Basic parameters
55V
2-4V
Gt;
62A
110A
200W
TO-220
Measured parameters
60V
2.9V
68
60A
FQP70N08
Basic parameters
80V
2-4V
41
35A
70A
155W
TO-220
Measured parameters
86V
3.2V
46
35A
75NF75
Basic parameters
75V
2-4V
20
40A
80A
300W
TO-220
Measured parameters
81V
3.6V
52
40A
IRFP064
Basic parameters
55V
2-4V
Gt;
59A
110A
200W
TO-3P
Measured parameters
67V
2.5V
57
60A
2SK1120
Basic parameters
1000V
2.5-5V
4
4A
8A
150W
TO-3P
Measured parameters
1086V
2.3V
5
4A
G160N60
Basic parameters
600V
3.5-6.5V
*
80A
160A
250W
TO-247
Measured parameters
626V
3.9V
35
60A
H40T120
Basic parameters
1200V
5-6.5V
21
40A
75A
270W
TO-247
Measured parameters
1390V
5.7V
20
40A
60N170D
Basic parameters
1700V
3.5-7.5V
60A
200W
TO-247
Measured parameters
1798V
4.8V
30
60A
JK9610AMOS tube test box picture



Before the purchase of customer service, customer service phone 13703013452